Intel, in collaboration with SoftBank, plans to launch a replacement for HBM memory by 2029.

SoftBank and Intel plan to bring a new memory called Z‑Angle Memory (ZAM) to market by 2029

How it is being implemented
Responsible companies: SoftBank – through its subsidiary Saimemory, which will handle development and sales. Intel will provide manufacturing and packaging technologies. Other participants: Fujitsu from Japan is involved in the project.

Why Z‑Angle Memory is needed
* Problems with existing HBM:
- Very expensive and power-hungry.
- As production volumes grow, classic DRAM suffers from resource shortages.

* The goal of Z‑AM is to offer a more economical, energy-efficient alternative while maintaining high data density.

Technical features
| Parameter | Description |
|-----------|-------------|
| Structure | A stack of several layers of chips (similar to HBM), but with more advanced packaging methods and architecture. |
| Density | The specific capacity of the stack is 2–3 times higher than that of HBM. |
| Power consumption | Reduced by about half compared to HBM. |
| Production cost | Expected either to maintain current price levels or to drop by up to 40 %. |

Packaging technology
* Intel offers NGDB (Next‑Generation Die Bonding), which improves the energy efficiency of ZAM memory compared with HBM.
* Prototypes already feature eight DRAM layers on top of a base die.

Launch plan
1. Interim prototypes – demonstration by the end of March 2028.
2. Mass production – start within 12 months after the presentation, i.e., around mid‑2029.

Thus, SoftBank and Intel intend to rapidly scale up the production of Z‑Angle Memory, providing a more affordable and energy-efficient memory option for future high-performance systems.