SK hynix is developing 16‑GB LPDDR6 chips with a bandwidth of 10.7 Gb/s for next‑generation flagship devices

SK hynix shows the first 16‑Gb LPDDR6 on a 10‑nm “1c” technology process

Short‑term memory 16‑gigabit LPDDR6 (1c) – the first industry product made with a 10‑nm sixth‑generation process.
Demo date CES 2026: the company first showed a finished chip and completed its initial industrial qualification.
Target audience Smartphones and tablets with “AI‑on‑device” (artificial intelligence processing directly on the device).

Key technical specifications
Metric Value Comparison
Data transfer speed > 10.7 Gb/s (base) +33 % versus LPDDR5X
Energy efficiency 20 % better thanks to sub‑channel structure and DVFS

- Sub‑channels allow only the necessary data lanes to be activated, saving energy.
- DVFS (Dynamic Voltage & Frequency Scaling) dynamically adjusts voltage and frequency based on load.

How it changes user experience
Load Memory behavior High (games, AI apps) Increases throughput, boosts performance. Low (texts, social media) Reduces frequency and voltage, saves battery.
Improved battery life and multitasking are expected for mobile devices.

Launch plan
- Preparation for serial production – first half of 2026.
- First deliveries – second half of 2026.

SK hynix states that the new LPDDR6 will expand its DRAM lineup for AI‑focused mobile devices, supporting the growing trend of embedding AI computing directly into phones and tablets.